The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

May. 14, 2014
Applicant:

Semikron Elektronik Gmbh & Co., KG, Nürnberg, DE;

Inventor:

Christian Göbl, Nürnberg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 23/433 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 23/373 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 23/3107 (2013.01); H01L 23/433 (2013.01); H01L 24/72 (2013.01); H01L 25/072 (2013.01); H01L 23/3735 (2013.01); H01L 23/4985 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A switching device having a substrate, a power semiconductor component, a connecting device, load connection devices and a pressure device. Substrate has electrically insulated conductor tracks. A power semiconductor component is arranged on a conductor track. Connecting device is formed as a film composite having an electrically conductive film and an electrically insulating film, and has first and second main surfaces. Switching device is connected in an internally circuit-conforming manner by connecting device. The pressure device has a pressure body with a first recess, a pressure element being arranged so that it projects out of the recess, wherein the pressure element presses onto a section of the second main surface of film composite and, in this case, the section is arranged within the surface of the power semiconductor component in projection along the normal direction of the power semiconductor component.


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