The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Dec. 20, 2012
Hiroshi Sugimoto, Tokyo, JP;
Takuyo Nakamura, Tokyo, JP;
Hiroshi Sugimoto, Tokyo, JP;
Takuyo Nakamura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a method for manufacturing a silicon carbide semiconductor device capable of preventing an increase in a cost of manufacturing one chip while favorably maintaining forward characteristics of the semiconductor device including (a) inspecting the characteristics of the forward conduction of body diodes as element structures; (b) classifying the body diode and the body diode as either a first group suitable for forward conduction or a second group unsuitable for forward conduction on the basis of an inspection result; and (c) manufacturing a silicon carbide semiconductor MOSFET that requires forward conduction using the body diode classified into the first group or manufacturing a silicon carbide semiconductor MOSFET that does not need forward conduction using the body diode classified into the second group.