The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Jun. 30, 2015
Applicant:
SK Hynix Inc., Icheon, KR;
Inventor:
Byung Wook Bae, Icheon, KR;
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01); H01L 21/4763 (2006.01); H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/30604 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/481 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate configured to include a circuit pattern at one surface, an insulation film formed over a back surface of the semiconductor substrate, a through silicon via (TSV) configured to pass through the semiconductor substrate and the insulation film, and an oxide film formed at a sidewall of the TSV and protruded from the back surface of the semiconductor substrate in a manner that the oxide film partially contacts the insulation film.