The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Jul. 14, 2015
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3083 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02598 (2013.01); H01L 21/02634 (2013.01); H01L 21/02639 (2013.01); H01L 21/823431 (2013.01); H01L 29/0847 (2013.01); H01L 29/66795 (2013.01);
Abstract
Methods for forming semiconductor devices, such as FinFETs, are provided. An epitaxial film is formed over a semiconductor fin, and the epitaxial film includes a top surface having two facets. A cap layer is deposited on the top surface, and portions of the epitaxial film in a lateral direction are removed. Having a smaller lateral dimension prevents the epitaxial film from merging with an adjacent epitaxial film and creates a gap between the epitaxial film and the adjacent epitaxial film.