Polysilicon manufacturing method that enhances homogeneity of polysilicon layer

Abstract

The present invention provides a polysilicon manufacturing method that enhances homogeneity of a polysilicon layer, including (1) forming a amorphous silicon layer () on a substrate (); (2) dividing the amorphous silicon layer () into a plurality of areas and measuring a film thickness of the amorphous silicon layer () in each of the areas: (3) comparing the measured film thickness of each of the areas with a predetermined film thickness so as to identify and define ones of the areas of which the measured film thicknesses are greater than a predetermined film thickness as excessive-film-thickness areas (); (4) spraying an etchant liquid to rinse the amorphous silicon layer () of the excessive-film-thickness areas () in order to etch off a portion of the amorphous silicon layer () of each of the excessive-film-thickness areas () and at the same time, spraying pure water to rinse remaining ones of the areas so as to make the film thickness of each of the areas of the amorphous silicon layer (') consistent with each other; and (5) applying a laser annealing operation to the rinsed amorphous silicon layer (′) so as to cause crystallization of the amorphous silicon layer (′) to form a polysilicon layer ().