The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Mar. 15, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Evangelos S Eleftheriou, Zurich, CH;

Daniel Krebs, Zurich, CH;

Abu Sebastian, Zurich, CH;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0011 (2013.01); G11C 11/5614 (2013.01); G11C 11/5685 (2013.01); G11C 13/0002 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 27/2463 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/12 (2013.01); H01L 45/124 (2013.01); H01L 45/1226 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/16 (2013.01); G11C 2213/18 (2013.01); G11C 2213/35 (2013.01); G11C 2213/52 (2013.01);
Abstract

Improved random-access memory cells, complementary cells, and memory devices. The present invention provides a RRAM cell for storing information in a plurality of programmable cell states. The RRAM cell includes: an electrically-insulating matrix located between a first electrode and a second electrode such that an electrically-conductive path, extending in a direction between said electrodes, is formed within said matrix on application of a write voltage to said electrodes; an electrically-conductive component; wherein a resistance is presented by the electrically-conductive component; and wherein said RRAM is arranged such that said resistance is at least about that of said electrically-conductive path and at most about that of said electrically-insulating matrix in any of said plurality of programmable cell states.


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