The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Nov. 18, 2013
Applicant:
Kabushiki Kaisha Toyota Jidoshokki, Kariya-shi, Aichi, JP;
Inventors:
Yusuke Sugiyama, Kariya, JP;
Masataka Nakanishi, Kariya, JP;
Takashi Mori, Kariya, JP;
Masakazu Murase, Kariya, JP;
Tomohiro Niimi, Kariya, JP;
Yoshihiro Nakagaki, Kariya, JP;
Shigenori Koishi, Kariya, JP;
Hiroshi Hirate, Kariya, JP;
Assignee:
KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, Aichi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C01B 33/021 (2006.01); C01B 33/02 (2006.01); C08G 77/60 (2006.01); H01M 4/38 (2006.01); H01M 4/62 (2006.01); H01G 11/30 (2013.01); C09D 183/16 (2006.01); C09D 183/14 (2006.01); H01G 11/86 (2013.01); H01M 4/04 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 4/36 (2006.01); H01M 10/0525 (2010.01); H01M 10/052 (2010.01); B82Y 40/00 (2011.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
C01B 33/021 (2013.01); C01B 33/02 (2013.01); C08G 77/60 (2013.01); C09D 183/14 (2013.01); C09D 183/16 (2013.01); H01G 11/30 (2013.01); H01G 11/86 (2013.01); H01M 4/049 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 4/386 (2013.01); H01M 4/621 (2013.01); H01M 4/622 (2013.01); H01M 10/0525 (2013.01); B82Y 40/00 (2013.01); C01P 2004/64 (2013.01); C01P 2006/12 (2013.01); C01P 2006/40 (2013.01); H01M 10/052 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01); Y02E 60/122 (2013.01); Y02E 60/13 (2013.01); Y02T 10/7011 (2013.01); Y02T 10/7022 (2013.01);
Abstract
A nanometer-size silicon material produced by heat treating a lamellar polysilane exhibits Raman-shift peaks existing at 341±10 cm, 360±10 cm, 498±10 cm, 638±10 cm, and 734±10 cmin a Raman spectrum, has a large specific surface area, and has a reduced SiO content.