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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9527748 B1

PDFFull Text
Expired
Date of Patent:
Dec. 27, 2016

Filed:

Nov. 18, 2013

Production process for nanometer-size silicon material

Applicant:

Kabushiki Kaisha Toyota Jidoshokki, Kariya-shi, Aichi, JP;

Inventors:

Yusuke Sugiyama, Kariya, JP;

Masataka Nakanishi, Kariya, JP;

Takashi Mori, Kariya, JP;

Masakazu Murase, Kariya, JP;

Tomohiro Niimi, Kariya, JP;

Yoshihiro Nakagaki, Kariya, JP;

Shigenori Koishi, Kariya, JP;

Hiroshi Hirate, Kariya, JP;

Assignee:

KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, Aichi, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Melvin C Mayes

Assistant Examiner:

Michael Forrest

Int. Cl.
CPC ...
C01B 33/021 (2006.01); C01B 33/02 (2006.01); C08G 77/60 (2006.01); H01M 4/38 (2006.01); H01M 4/62 (2006.01); H01G 11/30 (2013.01); C09D 183/16 (2006.01); C09D 183/14 (2006.01); H01G 11/86 (2013.01); H01M 4/04 (2006.01); H01M 4/134 (2010.01); H01M 4/1395 (2010.01); H01M 4/36 (2006.01); H01M 10/0525 (2010.01); H01M 10/052 (2010.01); B82Y 40/00 (2011.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
C01B 33/021 (2013.01); C01B 33/02 (2013.01); C08G 77/60 (2013.01); C09D 183/14 (2013.01); C09D 183/16 (2013.01); H01G 11/30 (2013.01); H01G 11/86 (2013.01); H01M 4/049 (2013.01); H01M 4/134 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 4/386 (2013.01); H01M 4/621 (2013.01); H01M 4/622 (2013.01); H01M 10/0525 (2013.01); B82Y 40/00 (2013.01); C01P 2004/64 (2013.01); C01P 2006/12 (2013.01); C01P 2006/40 (2013.01); H01M 10/052 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01); Y02E 60/122 (2013.01); Y02E 60/13 (2013.01); Y02T 10/7011 (2013.01); Y02T 10/7022 (2013.01);
Abstract

A nanometer-size silicon material produced by heat treating a lamellar polysilane exhibits Raman-shift peaks existing at 341±10 cm, 360±10 cm, 498±10 cm, 638±10 cm, and 734±10 cmin a Raman spectrum, has a large specific surface area, and has a reduced SiO content.

Find Patent Forward Citations

Sugiyama, Yusuke. (2016). Production process for nanometer-size silicon material (U.S. Patent No. 9527748). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9527748

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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