The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Nov. 06, 2013
Applicant:

Cheil Industries, Inc., Uiwang-si, Gyeonggi-do, KR;

Inventors:

Xianghui Zeng, Albany, CA (US);

Lorenza Moro, San Carlos, CA (US);

Damien Boesch, San Jose, CA (US);

Assignee:

Samsung SDI Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/52 (2006.01); H01L 51/00 (2006.01); C23C 14/00 (2006.01); C23C 14/08 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5253 (2013.01); C23C 14/00 (2013.01); C23C 14/081 (2013.01); C23C 16/403 (2013.01); C23C 16/45525 (2013.01); H01L 51/0096 (2013.01); Y02E 10/549 (2013.01); Y10T 428/31504 (2015.04);
Abstract

A gas and moisture permeation barrier stack deposited by both sputtering and atomic layer deposition techniques. In one embodiment, the barrier stack comprises a bottom barrier layer deposited on a substrate by sputtering and a top barrier layer deposited on the sputtered layer by atomic layer deposition. In one embodiment, the sputtered barrier layer has a water vapor transmission rate of about 10gm/m·day or lower, and the top barrier layer improves the water vapor transmission rate of the resulting two-layer barrier stack to about 10gm/m·day or lower.


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