The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Dec. 08, 2010
Applicants:
Nelson Tansu, Bethlehem, PA (US);
Hua Tong, Allentown, PA (US);
Jing Zhang, Bethlehem, PA (US);
Guangyu Liu, Bethlehem, PA (US);
Gensheng Huang, Bethlehem, PA (US);
Inventors:
Nelson Tansu, Bethlehem, PA (US);
Hua Tong, Allentown, PA (US);
Jing Zhang, Bethlehem, PA (US);
Guangyu Liu, Bethlehem, PA (US);
Gensheng Huang, Bethlehem, PA (US);
Assignee:
LEHIGH UNIVERSITY, Bethlehem, PA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/14 (2006.01); H01L 35/22 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 35/22 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01);
Abstract
The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).