The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Apr. 01, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jong Sun Maeng, Suwon-si, KR;
Jun Youn Kim, Hwaseong-si, KR;
Sung Min Choi, Yongin-si, KR;
Kyung Ho Yoo, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of AlGaN, where 0<x≦1. A plurality of first regions blocking overflow of electrons from the active layer to the p-type semiconductor layer and a plurality of second regions formed of InN are alternately disposed within the electron blocking layer.