The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Jan. 23, 2014
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Yu-Yao Lin, Hsinchu, TW;

Tsun-Kai Ko, Hsinchu, TW;

Chien-Yuan Tseng, Hsinchu, TW;

Yen-Chih Chen, Hsinchu, TW;

Chun-Ta Yu, Hsinchu, TW;

Shih-Chun Ling, Hsinchu, TW;

Cheng-Hsiung Yen, Hsinchu, TW;

Hsin-Hsien Wu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 33/32 (2010.01); H01L 33/14 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/14 (2013.01); H01L 33/22 (2013.01);
Abstract

This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises AlGaN (0<x<1) and the second sub-layer has a surface comprising a structure of irregularly distributed holes.


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