The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Apr. 21, 2014
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Shiuan-Leh Lin, Hsinchu, TW;
Shih-Chang Lee, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 21/30 (2006.01); H01L 29/205 (2006.01); H01L 31/18 (2006.01); H01L 33/12 (2010.01); H01L 31/0304 (2006.01); H01L 31/0687 (2012.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 21/0251 (2013.01); H01L 21/02461 (2013.01); H01L 21/02505 (2013.01); H01L 21/02543 (2013.01); H01L 31/03046 (2013.01); H01L 31/06875 (2013.01); H01L 31/1844 (2013.01); Y02E 10/544 (2013.01);
Abstract
An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant.