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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9525096 B1

PDFFull Text
Date of Patent:
Dec. 20, 2016

Filed:

Feb. 06, 2014

Plating equipment for solar cell wafer using electroplating and light-induced plating jointly and method of the same

Applicant:

Hojin Platech Co., Ltd., Ansan-Si, KR;

Inventors:

Pan Soo Kim, Yongin-Si, KR;

Duk Haeng Lee, Bucheon-Si, KR;

Woon Suk Jung, Ansan-Si, KR;

Assignee:

HOJIN PLATECH CO., LTD., Ansan-Si, KR;

Attorney:

Perkins Coie LLP

Primary Examiner:

Bryan D Ripa

Int. Cl.
CPC ...
C25D 7/12 (2006.01); H01L 31/18 (2006.01); C25D 17/00 (2006.01); H01L 31/0224 (2006.01); C25D 17/06 (2006.01); C23C 18/16 (2006.01); H01L 21/67 (2006.01); C25D 5/00 (2006.01); C25D 17/12 (2006.01); C25D 21/12 (2006.01); C25D 5/08 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); C23C 18/1653 (2013.01); C25D 5/006 (2013.01); C25D 7/126 (2013.01); C25D 17/001 (2013.01); C25D 17/06 (2013.01); C25D 17/12 (2013.01); H01L 21/6723 (2013.01); H01L 31/022425 (2013.01); C25D 5/08 (2013.01); C25D 17/008 (2013.01); C25D 21/12 (2013.01); Y02E 10/50 (2013.01);
Abstract

The present invention relates to plating equipment and method for a solar cell wafer using electroplating and light-induced plating jointly. The plating equipment includes a jig allowing a wafer (), that is a body to be plated, to be vertically immersed into a plating solution at a center of a plating bath (), a first plating unit () comprising a plurality of anode members () symmetrically disposed on both sides of the plating bath () facing the wafer (), the first plating unit performing electroplating; and a second plating unit () disposed in a light source receiving unit () physically blocked from the first plating unit (), the second plating unit () being disposed at a rear side of the anode members () to perform light-induced plating by using an light emitting diode (LED) lamp () irradiating light onto the wafer ().

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