The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Dec. 28, 2015
Inventec Solar Energy Corporation, Taoyuan, TW;
Yu-Hsiang Huang, Taoyuan, TW;
Yu Ta Cheng, Taoyuan, TW;
Chuan Chi Chen, Taoyuan, TW;
Chia-Lung Lin, Taoyuan, TW;
Chin-Pao Taso, Taoyuan, TW;
Jung-Wu Chien, Taoyuan, TW;
Haw Yen, Taoyuan, TW;
INVENTEC SOLAR ENERGY CORPORATION, Taoyuan, TW;
Abstract
A method of forming bifacial solar cell structure is described. The method comprises: performing boron diffusion on an upper surface of a semiconductor substrate to form a P+ region and a boron silicon glass (BSG) layer on the P+ region; stripping the BSG layer to expose the P+ region and stripping a blocking layer on a lower surface of the semiconductor substrate simultaneously; forming a first anti-reflection coating layer on the P+ region; forming sacrifice film on the first anti-reflection coating layer; performing phosphorus diffusion on the lower surface to form an N+ region and a phosphorus silicon glass (PSG) layer on the N+ region; stripping the PSG layer on the N+ region to expose the N+ region and stripping the sacrifice film on the first anti-reflection coating layer simultaneously; and forming a second anti-reflection coating layer on the N+ region.