The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Sep. 17, 2013
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Christoph Schelling, Stuttgart, DE;

Walter Daves, Stuttgart, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7788 (2013.01); H01L 29/42372 (2013.01); H01L 29/66462 (2013.01); H01L 29/7789 (2013.01); H01L 29/7855 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 2924/1033 (2013.01);
Abstract

A vertical microelectronic component includes a semiconductor substrate having a front side and a back side, and a multiplicity of fins formed on the front side. Each fin has a side wall and an upper side and is separated from other fins by trenches. Each fin includes a GaN/AlGaN heterolayer region formed on the side wall and including a channel region extending essentially parallel to the side wall. Each fin includes a gate terminal region arranged above the GaN/AlGaN heterolayer region and electrically insulated from the channel region in the associated trench on the side wall. A common source terminal region arranged above the fins is connected to a first end of the channel region in a vicinity of the upper sides. A common drain terminal region arranged above the back side is connected to a second end of the channel region in a vicinity of the front side.


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