The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Apr. 18, 2016
Infineon Technologies Austria Ag, Villach, AT;
Martin Vielemeyer, Villach, AT;
Infineon Technologies Austin AG, Villach, AT;
Abstract
A semiconductor device is manufactured by forming a plurality of trenches extending into a semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches. A trench fill material is disposed in the trenches, the trench fill material extending above the first main surface of the semiconductor material. Sacrificial spacers are formed on the semiconductor material adjacent opposing sides of the trench fill material, and gate electrodes are formed on the first main surface of the semiconductor material adjacent the sacrificial spacers. The gate electrodes have the same alignment with respect to the trenches and define lateral channel regions in the mesas under the gate electrodes. The sacrificial spacers are removed after formation of the gate electrodes. Source regions are formed in a region of the mesas, and a drain region is formed spaced apart from the source regions.