The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Jun. 13, 2012
Applicants:
Min Young Hwang, Seoul, KR;
Seok Min Kang, Seoul, KR;
Moo Seong Kim, Seoul, KR;
Yeong Deuk JO, Seoul, KR;
Inventors:
Min Young Hwang, Seoul, KR;
Seok Min Kang, Seoul, KR;
Moo Seong Kim, Seoul, KR;
Yeong Deuk Jo, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0243 (2013.01); H01L 21/02378 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01);
Abstract
A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate.