The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Apr. 10, 2014
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Chung-Ren Lao, Taichung, TW;
Hsing-Chao Liu, Jhudong Township, TW;
Tzung-Hsian Wu, Kaohsiung, TW;
Chih-Jen Huang, Dongshan Township, TW;
Assignee:
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 21/28052 (2013.01); H01L 27/0629 (2013.01); H01L 27/1085 (2013.01); H01L 28/20 (2013.01); H01L 29/4933 (2013.01); H01L 29/665 (2013.01);
Abstract
A semiconductor device including a substrate having an isolation structure therein is disclosed. A capacitor is disposed on the isolation structure and includes a polysilicon electrode, an insulating layer disposed on the polysilicon electrode, and a metal electrode disposed on the insulating layer. A method for forming the semiconductor device is also disclosed.