The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Jan. 05, 2016
Applicants:

Byung-jin Lee, Seoul, KR;

Jee-yong Kim, Hwaseong-si, KR;

Dae-seok Byeon, Seongnam-si, KR;

Inventors:

Byung-Jin Lee, Seoul, KR;

Jee-Yong Kim, Hwaseong-si, KR;

Dae-Seok Byeon, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01);
Abstract

A vertical memory device includes a substrate, gate lines, channels, contacts and contact spacers. The gate lines are stacked on top of each other on the substrate. The gate lines are spaced apart from each other in a vertical direction with respect to a top surface of the substrate. The gate lines include step portions that extend in a parallel direction with respect to the top surface of the substrate. The channels extend through the gate lines in the vertical direction. The contacts are on the step portions of the gate lines. The contact spacers are selectively formed along sidewalls of a portion of the contacts.


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