The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Dec. 20, 2013
Globalfoundries Inc., Grand Kayman, KY;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A method of forming a semiconductor device including the steps of forming an electrically programmable fuse (e-fuse) on an isolation region and a transistor on an active region of a wafer, wherein forming the transistor includes forming a dummy gate above a substrate, removing the dummy gate and forming a metal gate in place of the dummy gate, and forming the e-fuse includes forming a metal-containing layer above the isolation region, forming a semiconductor layer on the metal-containing layer during the process of forming the dummy gate and of the same material as the dummy gate, forming a hard mask layer on the semiconductor layer formed on the metal-containing layer, and forming contact openings in the hard mask layer and semiconductor layer during the process of removing the dummy gate.