The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
May. 16, 2016
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Abstract
A CMOS inverter is provided. The CMOS inverter includes a substrate. The CMOS inverter also includes an NMOS transistor having a first active region, a first isolation structure surrounding the first active region, a first connect structure, a plurality of the first metal interconnect structure and a first shunted gate structure to reduce a delay time and increase a saturation current. Further, the CMOS inverter includes a PMOS transistor having a second active region with a reduced area to reduce the delay time and increase the saturation current, a second isolation structure surrounding the second active region, a second connect structure, a plurality of metal interconnect structure and a second gate structure connecting with the first gate structure through the first connect structure and/or the second connect structure.