The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Aug. 31, 2015
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventors:
Assignee:
SanDisk Technologies LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 27/115 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76849 (2013.01); H01L 21/76846 (2013.01); H01L 23/5226 (2013.01); H01L 23/53266 (2013.01); H01L 27/115 (2013.01);
Abstract
A nitridation step applied to a tungsten via in a first silicon oxide layer forms a tungsten nitride layer on an exposed top surface of the tungsten via. Subsequently, a second silicon oxide layer is formed over the first silicon oxide layer and the tungsten via. Subsequently, an opening is formed through the second silicon oxide layer to expose at least part of the silicon nitride layer. Subsequently, a wet clean step is performed.