The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Mar. 26, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jin-Su Lee, Hwaseong-si, KR;

Young-Wook Park, Osan-si, KR;

Hee-Sook Park, Hwaseong-si, KR;

Dong-Bok Lee, Hwaseong-si, KR;

Jong-Myeong Lee, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/288 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/288 (2013.01); H01L 21/76816 (2013.01); H01L 21/76879 (2013.01); H01L 21/76895 (2013.01); H01L 29/4236 (2013.01); H01L 29/78 (2013.01); H01L 21/76843 (2013.01); H01L 21/76844 (2013.01); H01L 21/76855 (2013.01);
Abstract

Semiconductor devices, and methods for fabricating a semiconductor device, include forming a contact hole penetrating an interlayer insulating layer and exposing a conductor defining a bottom surface of the contact hole, forming a sacrificial layer filling the contact hole, forming a first trench overlapping a part of the contact hole by removing at least a part of the sacrificial layer, forming a spacer filling the first trench, forming a second trench by removing a remainder of the sacrificial layer, and forming a metal electrode filling the contact hole and the second trench using electroless plating.


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