The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Jan. 13, 2014
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
Wen Hsiang Lin, Hsinchu, TW;
Chang-Hua Hsieh, Hsinchu, TW;
Assignee:
Epistar Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 21/0243 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01);
Abstract
A nitride-based semiconductor light-emitting device includes a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped AlGaN layer formed between the first semiconductor structure and the semiconductor buffer structure.