The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Jul. 07, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Woojin Rim, Seoul, KR;
Taejoong Song, Seongnam-si, KR;
Gyuhong Kim, Seoul, KR;
Jongsun Park, Seoul, KR;
Woong Choi, Seoul, KR;
Abstract
A memory device includes a first memory cell array including memory cells of a single-ended bitline structure, a second memory cell array including memory cells of a single-ended bitline structure, a reference voltage generator configured to output a bitline voltage of a selected one of the first and second memory cell arrays as a sensing voltage according to an array select signal and output a bitline voltage of an unselected memory cell array as a reference voltage, and a differential sense amplifier configured to amplify and output a difference between the sensing voltage and the reference voltage. Logic states of the sensing voltage and the reference voltage are complementary to each other.