The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Mar. 10, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Shigeru Nakagawa, Kawasaki, JP;
Seiji Takeda, Yokohama, JP;
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/136 (2006.01); G02B 6/122 (2006.01); G02B 6/132 (2006.01); G02F 1/017 (2006.01); G02F 1/025 (2006.01); H01S 5/20 (2006.01); H01S 5/02 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 6/122 (2013.01); G02B 6/132 (2013.01); G02F 1/01708 (2013.01); G02F 1/025 (2013.01); H01S 5/2031 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12078 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12128 (2013.01); G02B 2006/12142 (2013.01); G02F 2202/101 (2013.01); G02F 2202/102 (2013.01); G02F 2202/105 (2013.01); H01S 5/021 (2013.01); H01S 5/22 (2013.01);
Abstract
An optical device includes an SOI substrate, the embedded insulating layer having a thickness of 200 nanometers (nm) or less; an optical waveguide comprising a Group III-V compound semiconductor material formed on top of the SOI substrate; and an optical leakage preventing layer formed inside the SOI substrate on a bottom side of the optical waveguide to prevent leakage of light from inside the optical waveguide towards the SOI substrate.