The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Sep. 23, 2014
Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Guangdong, CN;

Inventor:

Jia Li, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F26B 21/06 (2006.01); C03C 17/245 (2006.01); C03C 23/00 (2006.01);
U.S. Cl.
CPC ...
C03C 17/245 (2013.01); C03C 23/0025 (2013.01); C03C 23/0075 (2013.01); C03C 2217/262 (2013.01); C03C 2218/31 (2013.01);
Abstract

A low temperature poly-silicon thin film preparation apparatus and a method for preparing the same are disclosed, the preparation apparatus comprises a substrate cleaning tank and an ozone generating device connected thereto, such that not only can blow off residual liquid on a surface of a glass substrate, but can also allow the glass substrate to directly contact the ozone, such that a silicon film on the surface of the glass substrate is more smooth and less impure, and an oxide film formed on the surface is more uniform since it contacts with the ozone at the first time after being cleaned by hydrofluoric acid, therefore the crystalline effect is more excellent.


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