The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Feb. 28, 2014
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Henri Sibuet, La Buisse, FR;
Abstract
A method for producing a microelectronic device including a substrate and a stack having at least one electrically conductive layer and at least one dielectric layer. The method includes formation, from one face of the substrate, of at least one pattern that is in depression with respect to a plane of the face of the substrate, the wall of the pattern having a bottom part and a flank part, the flank part being situated between the bottom part and the face of the substrate, the flank part having at least one inclined wall as far as the face of the substrate. With formation of the stack, the layers of the stack helping at least partially fill in the pattern. The stack is thinned of the stack at least as far as the plane of the face of the substrate so as to completely expose the edge of said at least one electrically conductive layer flush in one plane, and at least one electrical connection member is formed on the substrate in contact with the edge of the at least one electrically conductive layer.