The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Sep. 09, 2013
Applicant:

Omron Corporation, Kyoto-shi, Kyoto, JP;

Inventors:

Tadashi Inoue, Kyoto, JP;

Takashi Kasai, Kyoto, JP;

Yuki Uchida, Kyoto, JP;

Assignee:

OMRON Corporation, Kyoto-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 7/18 (2006.01); H04R 19/00 (2006.01); H04R 19/04 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
H04R 7/18 (2013.01); B81B 7/0006 (2013.01); H04R 19/005 (2013.01); H04R 19/04 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0307 (2013.01); B81B 2207/07 (2013.01); H04R 2410/03 (2013.01);
Abstract

A diaphragm is arranged on the upper surface of a silicon substrate so as to cover a chamber in the silicon substrate. Multiple anchors are provided on the upper surface of the silicon substrate, and the lower surfaces of corner portions of the diaphragm are supported by the anchors. Also, a fixed electrode plate is provided above the diaphragm with an air gap therebetween. In a view from a direction perpendicular to the upper surface of the silicon substrate, the entire length of the outer edge of the diaphragm located between adjacent anchors is located outward of a line segment that circumscribes the edges of the adjacent anchors on the side distant from the center of the diaphragm. Also, one or two or more through-holes are formed in the diaphragm in the vicinity of the anchors.


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