The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Feb. 27, 2013
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Peter B. Johnson, Sunnyvale, CA (US);

Ira Oaktree Wygant, Palo Alto, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02N 1/00 (2006.01); B06B 1/02 (2006.01); A61B 8/00 (2006.01);
U.S. Cl.
CPC ...
H02N 1/006 (2013.01); H02N 1/008 (2013.01); A61B 8/4483 (2013.01); B06B 1/0292 (2013.01); B06B 2201/76 (2013.01);
Abstract

A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region. A membrane layer is bonded on the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A through-substrate via (TSV) includes a dielectric liner which extends from a bottom side of the first substrate to a top surface of the membrane layer. A top side metal layer includes a first portion over the TSV, over the movable membrane, and coupling the TSV to the movable membrane. A patterned metal layer is on the bottom side surface of the first substrate including a first patterned layer portion contacting the bottom side of the first substrate lateral to the TSV.


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