The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Jul. 28, 2014
Applicant:
Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;
Inventor:
Aoi Hidaka, Yokkaichi, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/16 (2013.01); H01L 45/065 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01);
Abstract
A semiconductor device according to an embodiment comprises a base layer. A material layer is provided on the base layer. A lower layer portion is provided in lower parts of trenches or holes formed in the material layer and has a crystal structure in a direction not perpendicular to a surface of the base layer. An upper layer portion is provided on the lower layer portion in the trenches or the holes and has a crystal structure in a direction substantially perpendicular to the surface of the base layer.