The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Nov. 05, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Stefan Kolb, Unterschleissheim, DE;

Markus Eckinger, Regenstauf, DE;

Assignee:

Infineon Tecnologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/07 (2006.01); H01L 27/22 (2006.01); H01L 29/82 (2006.01); H01L 43/06 (2006.01); G01R 33/00 (2006.01); H01L 43/14 (2006.01);
U.S. Cl.
CPC ...
H01L 43/065 (2013.01); G01R 33/0035 (2013.01); G01R 33/0052 (2013.01); G01R 33/07 (2013.01); G01R 33/075 (2013.01); H01L 27/22 (2013.01); H01L 43/14 (2013.01);
Abstract

A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.


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