The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Oct. 05, 2015
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Chang Suk Han, Ansan-si, KR;

Hwa Mok Kim, Ansan-si, KR;

Mi So Ko, Ansan-si, KR;

A Ram Cha Lee, Ansan-si, KR;

Dae Woong Suh, Ansan-si, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 21/02 (2006.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/24 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/12 (2013.01); H01L 33/22 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/20 (2013.01);
Abstract

A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including AlGaN on a substrate, forming a sacrificial layer including AlGaN on the first super-lattice layer, partially removing the sacrificial layer, forming an epitaxial layer on the sacrificial layer, and separating the substrate from the epitaxial layer, wherein the sacrificial layer includes voids, the substrate is separated from the epitaxial layer at the sacrificial layer, and forming an epitaxial layer includes forming an n-type semiconductor layer including n-type AlGaN (0<u≦z≦x<1). With this structure, the light emitting device can emit UV light and be separated from the substrate.


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