The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Oct. 23, 2014
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Daisuke Kumaki, Tokamachi, JP;

Satoshi Seo, Kawasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 33/00 (2010.01); H01L 51/52 (2006.01); H01L 33/60 (2010.01); H01L 27/15 (2006.01); H01L 33/42 (2010.01); H01L 27/32 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0008 (2013.01); H01L 27/15 (2013.01); H01L 33/00 (2013.01); H01L 33/42 (2013.01); H01L 33/60 (2013.01); H01L 51/506 (2013.01); H01L 51/5052 (2013.01); H01L 51/5068 (2013.01); H01L 51/5296 (2013.01); H01L 27/3244 (2013.01); H01L 51/0081 (2013.01); H01L 51/5265 (2013.01); H01L 2251/558 (2013.01);
Abstract

An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.


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