The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Feb. 23, 2016
Tamura Corporation, Tokyo, JP;
Riken, Saitama, JP;
Yoshikatsu Morishima, Tokyo, JP;
Hideki Hirayama, Saitama, JP;
RIKEN, Saitama, JP;
TAMURA CORPORATION, Tokyo, JP;
Abstract
A nitride semiconductor template includes a GaOsubstrate, a buffer layer that includes as a main component AlN and is formed on the GaOsubstrate, a first nitride semiconductor layer that includes as a main component AlGaN (0.2<x≦1) and is formed on the buffer layer, a second nitride semiconductor layer that includes as a main component AlGaN (0.2≦y≦0.55, y<x) and is formed on the first nitride semiconductor layer, and a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and includes a multilayer structure including an InAlGaN (0.02≦u1≦0.03, u1+v1+w1=1) layer and InAlGaN (0.02≦u2≦0.03, u2+v2+w2=1, v1+0.05≦v2≦v1+0.2) layers on both sides of the InAlGaN layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile