The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9520524 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 13, 2016

Filed:

Jul. 23, 2014
Applicant:

Lilas Gmbh, Dortmund, DE;

Inventor:

Vitalij Lissotschenko, Froendenberg, DE;

Assignee:

LILAS GMBH, Dortmund, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); C03C 23/00 (2006.01); H01L 31/0236 (2006.01); H01L 31/048 (2014.01); C03C 17/34 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); C03C 17/3482 (2013.01); C03C 23/004 (2013.01); H01L 31/02366 (2013.01); H01L 31/048 (2013.01); H01L 31/182 (2013.01); H01L 31/1884 (2013.01); C03C 2217/94 (2013.01); C03C 2218/31 (2013.01); Y02E 10/546 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method for producing a solar cell, in particular a silicon thin-film solar cell, wherein a TCO layer () is deposited on a glass substrate () and at least a silicon layer () is deposited on the TCO layer (), wherein the glass substrate () is exposed to electron radiation prior to the application of the TCO layer (), thereby producing a light-scattering layer () of the glass substrate (), onto which the TCO layer () is deposited. Alternatively or additionally, a first silicon layer () may be deposited on the TCO layer (), wherein the first silicon layer () is exposed to laser radiation or electron radiation, and wherein a second silicon layer () is deposited on the irradiated first silicon layer ().


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