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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9520511 B1

PDFFull Text
Expired
Date of Patent:
Dec. 13, 2016

Filed:

Jan. 24, 2015

Apparatus and method for optically initiating collapse of a reverse biased p-type-n-type junction to cause a semiconductor switch to transition from a current blocking mode to a current conduction mode

Applicant:

Applied Physical Electronics, L.c., Austin, TX (US);

Inventor:

William C. Nunnally, Austin, TX (US);

Assignee:

Applied Physical Electronics L.C., Austin, TX (US);

Attorneys:

G+J Law Group PLLC

Cyrus F. Bharucha

Georgios A. Georgakis

Primary Examiner:

Que T Le

Int. Cl.
CPC ...
H01L 31/0288 (2006.01); H01L 31/11 (2006.01); H01L 31/111 (2006.01); H01L 31/113 (2006.01); H01L 31/105 (2006.01); H01L 31/167 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0288 (2013.01); H01L 31/105 (2013.01); H01L 31/111 (2013.01); H01L 31/1105 (2013.01); H01L 31/1113 (2013.01); H01L 31/1136 (2013.01); H01L 31/167 (2013.01);
Abstract

An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

Find Patent Forward Citations

Nunnally, William. (2016). Apparatus and method for optically initiating collapse of a reverse biased p-type-n-type junction to cause a semiconductor switch to transition from a current blocking mode to a current conduction mode (U.S. Patent No. 9520511). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9520511

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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