The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Jan. 26, 2012
Applicant:

Goro Nakatani, Kyoto, JP;

Inventor:

Goro Nakatani, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); B81B 3/00 (2006.01); H04R 19/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/84 (2013.01); B81B 3/0021 (2013.01); B81B 2201/0257 (2013.01); B81B 2201/0292 (2013.01); B81B 2203/0109 (2013.01); B81B 2203/04 (2013.01); B81B 2203/051 (2013.01); H04R 19/005 (2013.01);
Abstract

A capacitance type MEMS sensor has a first electrode portion and a second electrode portion facing each other. The sensor includes a semiconductor substrate having a recess dug in a thickness direction of the semiconductor substrate, the recess having sidewalls, one of which serves as the first electrode portion. The sensor further includes a diaphragm serving as the second electrode portion, the diaphragm arranged within the recess to face the first electrode portion in a posture extending along a depth direction of the recess, the diaphragm having a lower edge spaced apart from the bottom surface of the recess, and is made of the same material as the semiconductor substrate. The sensor further includes an insulating film arranged to join the diaphragm to the semiconductor substrate.


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