The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Oct. 28, 2015
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Yasuhiro Hirabayashi, Nagoya-shi, JP;
Hiroshi Hosokawa, Toyota-shi, JP;
Yoshifumi Yasuda, Nisshin-shi, JP;
Akitaka Soeno, Toyota-shi, JP;
Masaru Senoo, Okazaki-shi, JP;
Satoru Machida, Nagatuke-shi, JP;
Yusuke Yamashita, Nagakute-shi, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A semiconductor layer of a reverse conducting insulated gate bipolar transistor is provided with a barrier region of the first conductive type, wherein the barrier region is disposed in the body region and electrically connects to the emitter electrode via a pillar member which extends from the one of main surfaces of the semiconductor layer. The barrier region includes a first barrier partial region, wherein a distance between the first barrier partial region and the drift region is a first distance, and a second barrier partial region, wherein a distance between the second barrier partial region and the drift region is a second distance which is longer than the first distance. The second barrier partial region is in contact with a side surface of an insulated trench gate.