The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Jan. 13, 2016
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Xinpeng Wang, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 29/66 (2006.01); H01L 21/283 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/283 (2013.01); H01L 21/28587 (2013.01); H01L 21/3085 (2013.01); H01L 21/30604 (2013.01); H01L 21/823437 (2013.01);
Abstract
A method for manufacturing a semiconductor device may include forming a cavity between two insulating portions that are positioned on a semiconductor substrate. The cavity may include a first cavity portion and a second cavity portion. The second cavity portion may be positioned between the semiconductor substrate and the first cavity portion. A width of the second cavity portion may be less than a width of the first cavity portion. The method may further include providing a set of gate metal material through the first cavity portion into the second cavity portion for forming a metal gate member of the semiconductor device.