The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Feb. 17, 2016
Applicant:
Pfc Device Holdings Limited, Hong Kong, HK;
Inventors:
Mei-Ling Chen, New Taipei, TW;
Kuan-Yu Chen, New Taipei, TW;
Assignee:
PFC DEVICE HOLDINGS LIMITED, Hong Kong, HK;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/332 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66333 (2013.01); H01L 21/0262 (2013.01); H01L 29/41708 (2013.01);
Abstract
A low-temperature epitaxial method manufactures backside field stop layer of insulated gate bipolar transistor (IGBT) first provides a first conductive type substrate and fabricates front-side elements and front metal layer on a front side of the IGBT. A second conductive type impurity layer is formed on a back side of the first conductive type substrate by low-temperature epitaxial process and a collector metal layer is formed on bottom face of the first conductive type substrate.