The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Jul. 25, 2014
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyun-Suk Lee, Suwon-si, KR;
Tae-Kyun Kim, Suwon-si, KR;
Jin-Su Lee, Hwaseong-si, KR;
Dong-Kyun Park, Seoul, KR;
Jong-Myeong Lee, Seongnam-si, KR;
Abstract
A semiconductor device includes a MIM capacitor on a substrate. The MIM capacitor includes a dielectric region and first and second electrodes on opposite sides of the dielectric region. At least one of the first and second electrodes, e.g., an upper electrode, includes an oxygen diffusion blocking material, e.g., oxygen atoms, at a concentration that decreases in a direction away from the dielectric region. The at least one of the first and second electrodes may include a first layer having a first concentration of the oxygen diffusion blocking material and a second layer on the first layer and having a second concentration of the oxygen diffusion blocking material less than the first concentration. The at least one of the first and second electrodes may further include a third layer on the second layer and having a concentration of the oxygen diffusion blocking material less than the second concentration.