The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Mar. 03, 2016
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Kyungdong Yoo, Gyeonggi-do, KR;

Kyoung-In Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/146 (2006.01); H04N 5/378 (2011.01); H04N 5/376 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H01L 27/14601 (2013.01); H01L 27/14605 (2013.01); H01L 27/14621 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14645 (2013.01); H04N 5/378 (2013.01); H04N 5/3765 (2013.01);
Abstract

Provided is an image sensor having improved characteristics. An image sensor in accordance with an embodiment of the present invention may include a photoelectric conversion element formed in a substrate; a transfer gate formed over the photoelectric conversion element, formed over a first surface of the substrate and having at least one through hole, wherein the through hole passes through the transfer gate; a floating diffusion layer formed over the transfer gate; a channel structure formed in the through hole and electrically coupling the photoelectric conversion element to the floating diffusion layer in response to a signal applied to the transfer gate; and a capacitor formed over the floating diffusion layer.


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