The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Jul. 07, 2015
Applicant:

Samsung Display Co., Ltd., Yongin, KR;

Inventors:

Young-Wook Lee, Suwon-si, KR;

Woo-Geun Lee, Yongin-si, KR;

Ki-Won Kim, Suwon-si, KR;

Hyun-Jung Lee, Yangju-si, KR;

Ji-Soo Oh, Uiwang-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1262 (2013.01); H01L 29/78693 (2013.01);
Abstract

A method of manufacturing a thin film transistor (TFT) array substrate includes forming a gate line and a gate electrode on a substrate, forming a gate-insulating layer and an oxide semiconductor layer on the gate line and the gate electrode, forming etch stop patterns at a thin-film transistor area and an area where the gate line and the data line overlap each other, forming a data conductor on the oxide semiconductor layer and the etch stop patterns, the data conductor comprising a source electrode and a drain electrode that constitute a TFT together with the gate electrode, and forming a data line extending in a direction intersecting the gate line.


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