The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Feb. 05, 2016
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventors:
Tae Kyung Kim, Cheongju-si, KR;
Dae Sung Eom, Cheongju-si, KR;
Assignee:
SK HYNIX INC., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/115 (2006.01); G11C 16/06 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/06 (2013.01); H01L 21/76897 (2013.01); H01L 27/1157 (2013.01); H01L 27/11578 (2013.01);
Abstract
A three-dimensional nonvolatile memory device includes a first vertical channel layer and a second vertical channel layer extending from a substrate, a plurality of memory cells, first selection transistors and second selection transistors spaced apart from each other along the first vertical channel layer and the second vertical channel layer, a pad, a contact plug and a bit line in a stacked configuration over the first vertical channel layer, and a common source line formed over the second vertical channel layer.