The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Oct. 02, 2014
Do-hyun Lee, Gyeonggi-do, KR;
Jae-duk Lee, Gyeonggi-do, KR;
Young-woo Park, Seoul, KR;
Yung-hwan Son, Gyeonggi-do, KR;
Do-hyun Lee, Gyeonggi-do, KR;
Jae-duk Lee, Gyeonggi-do, KR;
Young-woo Park, Seoul, KR;
Yung-hwan Son, Gyeonggi-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A semiconductor device is provided. A channel layer is formed on a substrate. The channel layer is extended in a first direction substantially perpendicular to an upper surface of the substrate. A ground selection line is formed on a first region of the channel layer. A plurality of word lines is formed on a second region of the channel layer. A plurality of string selection lines is formed on a third region of the channel layer. The second region of the channel layer includes a first conductivity type dopant. The first, second and third regions of the channel layer are disposed along the first direction.