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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9520377 B1

PDFFull Text
Date of Patent:
Dec. 13, 2016

Filed:

Jun. 23, 2014

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Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Jeong-Won Yoon, Suwon-si, KR;

Baik-woo Lee, Gwangmyeong-si, KR;

Seong-woon Booh, Yongin-si, KR;

Chang-mo Jeong, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Matthew Gordon

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); B23K 1/00 (2006.01); B23K 20/02 (2006.01); B23K 20/16 (2006.01); B23K 20/233 (2006.01); B23K 35/02 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); B23K 1/0016 (2013.01); B23K 20/023 (2013.01); B23K 20/16 (2013.01); B23K 20/233 (2013.01); B23K 35/025 (2013.01); B23K 35/0244 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 24/95 (2013.01); B23K 2201/42 (2013.01); H01L 2224/293 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/32507 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83091 (2013.01); H01L 2224/83192 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15787 (2013.01);
Abstract

Semiconductor device packages and methods of manufacturing the semiconductor device packages are provided. A semiconductor device package may include a bonding layer between a substrate and a semiconductor chip, and the bonding layer may include an intermetallic compound. The intermetallic compound may be a compound of metal and solder material. The intermetallic compound may include AgSn. A method of manufacturing the semiconductor device package may include forming a bonding layer, which bonds a semiconductor chip to a substrate, by using a mixed paste including metal particles and a solder material. The bonding layer may be formed by forming an intermetallic compound, which is formed by heating the mixed paste to react the metal particles with the solder material.

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