The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Aug. 20, 2014
Applicants:

Zihao M. Gao, Gilbert, AZ (US);

David C. Burdeaux, Tempe, AZ (US);

Wayne R. Burger, Phoenix, AZ (US);

Robert A. Pryor, Mesa, AZ (US);

Philippe Renaud, Chandler, AZ (US);

Inventors:

Zihao M. Gao, Gilbert, AZ (US);

David C. Burdeaux, Tempe, AZ (US);

Wayne R. Burger, Phoenix, AZ (US);

Robert A. Pryor, Mesa, AZ (US);

Philippe Renaud, Chandler, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/60 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/283 (2006.01); H01L 21/306 (2006.01); H01L 21/71 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/60 (2013.01); H01L 21/283 (2013.01); H01L 21/30604 (2013.01); H01L 21/71 (2013.01); H01L 29/0653 (2013.01); H01L 29/0696 (2013.01); H01L 29/0847 (2013.01); H01L 29/402 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/4175 (2013.01); H01L 29/66659 (2013.01); H01L 29/66681 (2013.01); H01L 29/7817 (2013.01); H01L 29/7823 (2013.01); H01L 29/7835 (2013.01); H01L 21/26586 (2013.01); H01L 29/0634 (2013.01); H01L 29/1045 (2013.01); H01L 29/1095 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A device includes a semiconductor substrate having a surface with a trench, first and second conduction terminals supported by the semiconductor substrate, a control electrode supported by the semiconductor substrate between the first and second conduction terminals and configured to control flow of charge carriers during operation between the first and second conduction terminals, and a Faraday shield supported by the semiconductor substrate and disposed between the control electrode and the second conduction terminal. At least a portion of the Faraday shield is disposed in the trench.


Find Patent Forward Citations

Loading…