The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Aug. 23, 2013
Zte Corporation, Shenzhen, Guangdong Province, CN;
Dapeng Wang, Shenzhen, CN;
Zhiyong Zhao, Shenzhen, CN;
Wu Zeng, Shenzhen, CN;
Xuelu Mu, Shenzhen, CN;
Baiqing Zong, Shenzhen, CN;
Yijun Cui, Shenzhen, CN;
ZTE CORPORATION, , CN;
Abstract
A transistor is provided, which includes: a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device contains a semiconductor compound layer, a metal layer, a heat conducting layer, a thermocouple heat conducting device and a heat sink layer, the semiconductor compound layer is grown on the semiconductor growth substrate, the metal layer is grown on the semiconductor compound layer, the heat conducting layer is grown on the metal layer, the thermocouple heating conducting device is grown on the heat conducting layer, and the heat sink layer is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer. The thermocouple heating conducting device may further contain power supply arms which are grown on the heat conducting layer and are electrically connected with the thermocouple heat conducting device.