The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Oct. 23, 2012
Applicant:
Anvil Semiconductors Limited, Warwickshire, GB;
Inventor:
Peter Ward, Cambridgeshire, GB;
Assignee:
Anvil Semiconductors Limited, Warwickshire, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/74 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02447 (2013.01); H01L 21/02642 (2013.01); H01L 21/02645 (2013.01); H01L 21/3081 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/66363 (2013.01); H01L 29/7393 (2013.01); H01L 29/7395 (2013.01); H01L 29/74 (2013.01);
Abstract
A method comprises providing a monocrystalline silicon wafer () having a principal surface () which supports a masking layer (), for example silicon dioxide or polycrystalline silicon, having windows () to expose corresponding regions of the silicon wafer, forming silicon carbide seed regions () on the exposed regions of the wafer, for example by forming carbon and converting the carbon into silicon carbide, and growing monocrystalline silicon carbide () on the silicon carbide seed regions. Thus, monocrystalline silicon carbide can be formed selectively on the silicon wafer which can help to avoid wafer bow.